1 - 2 ? 2000 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 300 v v dgr t j = 25 c to 150 c; r gs = 1 m 300 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c, chip capability 52 a i dm t c = 25 c, pulse width limited by t jm 208 a i ar t c = 25 c52a e ar t c = 25 c30mj e as t c = 25 c 1.5 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 5 v/ns t j 150 c, r g = 2 p d t c = 25 c 360 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.063 in) from case for 10 s 300 c m d mounting torque to-247 1.13/10 nm/lb.in. to-264 0.9/6 nm/lb.in. weight to-247 6 g to-264 10 g to-268 4 g hiperfet tm power mosfets q-class n-channel enhancement mode avalanche rated, high dv/dt, low t rr low gate charge and capacitances features ? low gate charge international standard packages epoxy meet ul 94 v-0, flammability classification low r ds (on) hdmos tm process rugged polysilicon gate cell structure avalanche energy and current rated fast intrinsic rectifier advantages easy to mount space savings high power density symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 1 ma 300 v v gs(th) v ds = v gs , i d = 4 ma 2 4 v i gss v gs = 20 v dc , v ds = 0 200 na i dss v ds = v dss t j = 25 c50 a v gs = 0 v t j = 125 c1ma r ds(on) v gs = 10 v, i d = 0.5 i d25 60 m pulse test, t 300 s, duty cycle d 2 % g = gate s = source tab = drain 98522b (7/00) to-247 ad (ixfh) (tab) to-268 (d3) ( ixft) (tab) g s to-264 aa (ixfk) s g d d (tab) v dss = 300 v i d25 = 52 a r ds(on) = 60m t rr 250 ns ixys reserves the right to change limits, test conditions, and dimensions. ixfh 52n30q ixfk 52n30q ixft 52n30q preliminary data
2 - 2 ? 2000 ixys all rights reserved symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 i d25 , pulse test 22 35 s c iss 5300 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 1010 pf c rss 200 pf t d(on) 27 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 60 ns t d(off) r g = 1.5 (external), 80 ns t f 25 ns q g(on) 150 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 34 nc q gd 75 nc r thjc 0.35 k/w r thck to-247 0.25 k/w to-264 0.15 k/w i f = i s -di/dt = 100 a/ s, v r = 100 v ixfh 52n30q ixfk 52n30q ixft 52n30q source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 52 a i sm repetitive; pulse width limited by t jm 208 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr 250 ns q rm 1 c i rm 8 a to-247 ad (ixfh) outline dim. millimeter inches min. max. min. max. a 19.81 20.32 0.780 0.800 b 20.80 21.46 0.819 0.845 c 15.75 16.26 0.610 0.640 d 3.55 3.65 0.140 0.144 e 4.32 5.49 0.170 0.216 f 5.4 6.2 0.212 0.244 g 1.65 2.13 0.065 0.084 h - 4.5 - 0.177 j 1.0 1.4 0.040 0.055 k 10.8 11.0 0.426 0.433 l 4.7 5.3 0.185 0.209 m 0.4 0.8 0.016 0.031 n 1.5 2.49 0.087 0.102 millimeter inches min. max. min. max. a 4.82 5.13 .190 .202 a1 2.54 2.89 .100 .114 a2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 d 25.91 26.16 1.020 1.030 e 19.81 19.96 .780 .786 e 5.46 bsc .215 bsc j 0.00 0.25 .000 .010 k 0.00 0.25 .000 .010 l 20.32 20.83 .800 .820 l1 2.29 2.59 .090 .102 p 3.17 3.66 .125 .144 q 6.07 6.27 .239 .247 q1 8.38 8.69 .330 .342 r 3.81 4.32 .150 .170 r1 1.78 2.29 .070 .090 s 6.04 6.30 .238 .248 t 1.57 1.83 .062 .072 dim. to-264 aa outline dim. millimeter inches min. max. min. max. a 4.9 5.1 .193 .201 a 1 2.7 2.9 .106 .114 a 2 .02 .25 .001 .010 b 1.15 1.45 .045 .057 b 2 1.9 2.1 .75 .83 c .4 .65 .016 .026 d 13.80 14.00 .543 .551 e 15.85 16.05 .624 .632 e 1 13.3 13.6 .524 .535 e 5.45 bsc .215 bsc h 18.70 19.10 .736 .752 l 2.40 2.70 .094 .106 l1 1.20 1.40 .047 .055 l2 1.00 1.15 .039 .045 l3 0.25 bsc .010 bsc l4 3.80 4.10 .150 .161 to-268aa (d 3 pak) min. recommended footprint ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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